350 nm process — engineering

The 350 nm process refers to the level of MOSFET semiconductor process technology that was reached around the 1993–1996 timeframe, by leading semiconductor companies like Sony, Intel and IBM.

Technology demonstrations

A MOSFET with a 300 nm channel length was fabricated by a research team led by K. Deguchi and Kazuhiko Komatsu at Nippon Telegraph and Telephone (NTT) in 1985.^[1]

In 1989, an IBM research team led by Egyptian engineer Hussein I. Hanafi demonstrated a 300 nm CMOS transistor.^[2]

Products featuring 350 nm manufacturing process

Sony introduced a 16 MB SRAM memory chip manufactured with a 350 nm process in 1993.^[3]
NEC, which introduced a 350 nm 3LI CMOS process in 1994, used it for processors in the Nintendo 64 (N64) game console, released in 1996.
- NEC VR4300i (1995), the CPU used in the N64.
- SGI Reality Coprocessor (RCP), the N64's GPU, manufactured by NEC.^[4]
Intel Pentium (P54CS, 1995), Pentium Pro (1995) and initial Pentium II CPUs (Klamath, 1997).
AMD K5 (1996) and original AMD K6 (Model 6, 1997) CPUs.
МЦСТ-R150 (2001).
Parallax Propeller (2006), 8 core microcontroller.^[5]

References

↑ Deguchi, K.; Komatsu, Kazuhiko; Miyake, M.; Namatsu, H.; Sekimoto, M.; Hirata, K. (1985). "Step-and-Repeat X-ray/Photo Hybrid Lithography for 0.3 μm Mos Devices". 1985 Symposium on VLSI Technology. Digest of Technical Papers: 74–75. ISBN 4-930813-09-3.
↑ Hanafi, Hussein I. (1989). "Submicron CMOS Circuit Simulation Model Accurate from Liquid Nitrogen to Room Temperature". In Heuberger, Anton (ed.). ESSDERC 89: Berlin, [Sept. 11 to 14, 1989]. Berlin Heidelberg New York, NY London Paris Tokyo Hong Kong: Springer. ISBN 978-0-387-51000-2.
↑ "Memory". STOL (Semiconductor Technology Online). Retrieved 25 June 2019.
↑ "Reality Co-Processor − The Power In Nintendo64" (PDF). Silicon Graphics. Retrieved 18 June 2019.
↑ "Propeller I semiconductor process technology? Is it 350nm or 180nm? - Parallax Forums". Forums.parallax.com. Archived from the original on 2012-07-10. Retrieved 2015-09-13.

Preceded by 600 nm	CMOS manufacturing processes	Succeeded by 250 nm

[1] Deguchi, K.; Komatsu, Kazuhiko; Miyake, M.; Namatsu, H.; Sekimoto, M.; Hirata, K. (1985). "Step-and-Repeat X-ray/Photo Hybrid Lithography for 0.3 μm Mos Devices". 1985 Symposium on VLSI Technology. Digest of Technical Papers: 74–75. ISBN 4-930813-09-3.

[2] Hanafi, Hussein I. (1989). "Submicron CMOS Circuit Simulation Model Accurate from Liquid Nitrogen to Room Temperature". In Heuberger, Anton (ed.). ESSDERC 89: Berlin, [Sept. 11 to 14, 1989]. Berlin Heidelberg New York, NY London Paris Tokyo Hong Kong: Springer. ISBN 978-0-387-51000-2.

[stol-3] "Memory". STOL (Semiconductor Technology Online). Retrieved 25 June 2019.

[4] "Reality Co-Processor − The Power In Nintendo64" (PDF). Silicon Graphics. Retrieved 18 June 2019.

[5] "Propeller I semiconductor process technology? Is it 350nm or 180nm? - Parallax Forums". Forums.parallax.com. Archived from the original on 2012-07-10. Retrieved 2015-09-13.

[1]

[2]

[3]

[4]

[5]

Semiconductor device fabrication
MOSFET scaling (process nodes)
020 μm – 1968 010 μm – 1971 006 μm – 1974 003 μm – 1977 1.5 μm – 1981 001 μm – 1984 800 nm – 1987 600 nm – 1990 350 nm – 1993 250 nm – 1996 180 nm – 1999 130 nm – 2001 090 nm – 2003 065 nm – 2005 045 nm – 2007 032 nm – 2009 028 nm – 2010 022 nm – 2012 014 nm – 2014 010 nm – 2016 007 nm – 2018 005 nm – 2020 003 nm – 2022
Future 002 nm ~ 2024
Half-nodes Density CMOS Industry Moore's law MOS integrated circuit MOS transistor Multi-gate MOSFET Transistor count Semiconductor Semiconductor device Nanoelectronics
v t e